Numerical Simulation of Semiconductor Devices
نویسنده
چکیده
The state of the art in self-consistent numerical modeling of semiconductor devices is reviewed. The physical assumptions which are required to describe carrier transport are discussed. Particular emphasis is put on the models for space charge, carrier mobility, carrier temperature, and carrier generationrecombination. Investigations about three-dimensional effects due to the field oxide in MOS-devices analyzed with MINIMOS 5 are presented.
منابع مشابه
Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...
متن کاملParallel Simulation of Semiconductor Devices on MIMD Machines
In this paper two unified, scalable and transportable parallel approaches to the numerical simulation of semiconductor devices are presented: Concurrent Device Simulation (CDS), and Spatial Device Decomposition (SDD). Both approaches have been developed and tested on the Parsytec Supercluster Model 64 which is a medium size transputer system. A series of examples illustrate the application of t...
متن کاملSimulation and Experimental Verification of Closed Loop Operation of Buck / Boost DC-DC Converter with Soft Switching
A major problem in an isolated DC/DC converters operating at high switching frequencies is the attendant switching losses in the semiconductor devices. This can be reduced by introducing either zero-voltage switching (ZVS) or zero-current switching (ZCS) of the semiconductor switches. This paper deals with the simulation, design, fabrication and experimental evaluation of a novel soft-switching...
متن کاملA Spectral Method for the Numerical Simulation of Transit-Time Devices
For the numerical simulation of semiconductor devices driven by a periodic voltage a new numerical approach is presented. The method is based on a temporal Fourier expansion to solve time-dependent nonlinear partial differential equations like the Drift-Diffusion Model. Disadvantages and problems of conventionally used time discretizations are avoided. To achieve high-accuracy results an interv...
متن کاملNumerical Simualtion of Nanoscale Semiconductor Devices
Device modeling of novel semiconductor devices requires adapted physical models which include quantum mechanical effects. The quantum hydrodynamic as well as the quantum drift diffusion model offers effective possibilities for the simulation of nanoscale devices, particularly if tunneling processes appear. The models can be implemented effectively in conventional device simulation systems.
متن کامل